Intrinsic and implantation-induced defects in CVD diamond

Diamond particles and films synthesized on silicon from CO/H-2 by microwave plasma chemical vapour deposition (CVD) are characterized. Intrinsic defects are investigated by electron miroscopy. The dominant dislocation located at the centre of the initial-stage particle governs the crystallinity of grown particles. Spotted layer growth on the {111} surface causes inferiority of {111} growth sectors. Substrate-induced distortion occurs by incorporation of a silicon protuberance inside the grown particle. New misorientated secondary nucleation occurs at the grain boundaries during formation of a polycrystalline film. Furthermore, residual ion-implantation-induced defects after restoration in a plasma are investigated by cathodoluminescence (CL) measurements. Residual point defects after annealing in plasma are observed from 2.156 and 3.189 eV centres. A higher rate of removal of the damaged region by H-2 plasma treatment occurs at higher doses. The addition of 1% CO to the plasma suppresses the removal of the damaged region and reduces implantation-induced point defects.