Phonon mechanism of mobility equilibrium fluctuation and properties of 1/f-noise

被引：27

作者：

Melkonyan, SV ^{[1
]}

Aroutiounian, VM ^{[1
]}

Gasparyan, FV ^{[1
]}

Asriyan, HV ^{[1
]}

机构：

[1] Yerevan State Univ, Dept Phys Semicond & Microelect, Yerevan 375025, Armenia

来源：

PHYSICA B-CONDENSED MATTER | 2006年 / 382卷 / 1-2期

关键词：

electron; phonon; scattering; mobility fluctuation;

D O I：

10.1016/j.physb.2006.01.521

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The main mechanisms of the generation of the equilibrium fluctuations of the electron mobility in homogeneous and non-degenerate semiconductors are studied. It is proven that the mobility fluctuations are related to energy fluctuations and are conditioned by random non-elastic scattering and generation-recombination processes. In particular, it is shown that the mobility fluctuations come into existence as a result of random electron-phonon and phonon-phonon scattering processes. The case of acoustic phonon-phonon scattering is considered in detail. The spectral density of the electron lattice mobility fluctuations is calculated on the base of a new phonon mechanism. It is shown that the noise spectrum over a broad frequency range has a 1/f form. The theoretical results for many samples agree with experimental data. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：65 / 70

页数：6

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