Thermal Stability of Silicon Carbide Power JFETs

被引：10

作者：

Buttay, Cyril ^{[1
]}

Ouaida, Remy ^{[2
]}

Morel, Herve ^{[1
]}

Bergogne, Dominique ^{[1
]}

Raynaud, Christophe ^{[1
]}

Morel, Florent ^{[1
]}

机构：

[1] Univ Lyon, Lab Ampere, F-69621 Villeurbanne, France

[2] Thales Microelect, Thales Grp Cap Bretagne, F-35370 Etrelles, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 12期

关键词：

JFET; silicon carbide (SiC); thermal runaway; INSTABILITY; DEVICES;

D O I：

10.1109/TED.2013.2287714

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon carbide (SiC) JFETs are attractive devices, but they might suffer from thermal instability. An analysis shows that two mechanisms could lead to their failure: the loss of gate control, which can easily be avoided, and a thermal runaway caused by the conduction losses. Destructive experimental tests performed on a dedicated system show that the latter mechanism is more severe than initially expected. A low thermal resistance and gate driver equipped with protections systems are thus required to ensure safe operation of the SiC JFETs.

引用

页码：4191 / 4198

页数：8

共 50 条

[21] High-Temperature Gate Drive Circuit for Silicon-Carbide JFETs
Jones, Matthew
Ratliff, Brian
Chen, Ya-Chi
Neft, Charles
Bhunia, Avijit
2013 1ST IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2013, : 72 - 75
[22] ANALYSIS OF NEUTRON DAMAGE IN HIGH-TEMPERATURE SILICON-CARBIDE JFETS
MCLEAN, FB
MCGARRITY, JM
SCOZZIE, CJ
TIPTON, CW
DELANCEY, WM
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (06) : 1884 - 1894
[23] Electro-Thermal Model of a Silicon Carbide Power MOSFET
Frifita, K.
M'Sirdi, N. K.
Baghaz, E.
Naamane, A.
Boussak, M.
PROCEEDINGS OF THE 1ST INTERNATIONAL CONFERENCE ON ELECTRONIC ENGINEERING AND RENEWABLE ENERGY, ICEERE 2018, 2019, 519 : 239 - 249
[24] On the Transient Thermal Characteristics of Silicon Carbide Power Electronics Modules
Mandrusiak, Gary
She, Xu
Waddell, Alistair Martin
Acharya, Sayan
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2018, 33 (11) : 9783 - 9789
[25] Electro-Thermal Simulation of Silicon Carbide Power Modules
Akturk, A.
Goldsman, N.
Potbhare, S.
2014 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD), 2014, : 237 - 240
[26] SPICE-aided modeling of high-voltage silicon carbide JFETs
Bargiel, Kamil
Zarebski, Janusz
Bisewski, Damian
39TH INTERNATIONAL MICROELECTRONICS AND PACKAGING IMAPS POLAND 2015 CONFERENCE, 2016, 104
[27] THERMAL STABILITY OF THE ALUMINUM/TITANIUM CARBIDE/SILICON CONTACT SYSTEM.
Eizenberg, M.
Brener, R.
Murarka, S.P.
Journal of Applied Physics, 1984, 55 (10): : 3799 - 3803
[28] THERMAL-STABILITY OF THE ALUMINUM TITANIUM CARBIDE SILICON CONTACT SYSTEM
EIZENBERG, M
BRENER, R
MURARKA, SP
JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3799 - 3803
[29] THERMAL-STABILITY STUDY OF SILICON-CARBIDE FIBERS (NICALON)
MAH, TI
HECHT, NL
MCCULLUM, DE
KIM, HM
KATZ, AP
LIPSITT, HA
AMERICAN CERAMIC SOCIETY BULLETIN, 1982, 61 (11): : 1190 - 1190
[30] PRESSURE EFFECTS ON THE THERMAL-STABILITY OF SILICON-CARBIDE FIBERS
JASKOWIAK, MH
DICARLO, JA
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1989, 72 (02) : 192 - 197

← 1 2 3 4 5 →