Thermal Stability of Silicon Carbide Power JFETs

被引：10

作者：

Buttay, Cyril ^{[1
]}

Ouaida, Remy ^{[2
]}

Morel, Herve ^{[1
]}

Bergogne, Dominique ^{[1
]}

Raynaud, Christophe ^{[1
]}

Morel, Florent ^{[1
]}

机构：

[1] Univ Lyon, Lab Ampere, F-69621 Villeurbanne, France

[2] Thales Microelect, Thales Grp Cap Bretagne, F-35370 Etrelles, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 12期

关键词：

JFET; silicon carbide (SiC); thermal runaway; INSTABILITY; DEVICES;

D O I：

10.1109/TED.2013.2287714

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon carbide (SiC) JFETs are attractive devices, but they might suffer from thermal instability. An analysis shows that two mechanisms could lead to their failure: the loss of gate control, which can easily be avoided, and a thermal runaway caused by the conduction losses. Destructive experimental tests performed on a dedicated system show that the latter mechanism is more severe than initially expected. A low thermal resistance and gate driver equipped with protections systems are thus required to ensure safe operation of the SiC JFETs.

引用

页码：4191 / 4198

页数：8

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