Highly Conductive SrVO3 as a Bottom Electrode for Functional Perovskite Oxides

被引：120

作者：

Moyer, Jarrett A. ^{[1
]}

Eaton, Craig ^{[2
,3
]}

Engel-Herbert, Roman ^{[2
,3
]}

机构：

[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[3] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 26期

基金：

美国国家科学基金会;

关键词：

functional complex oxides; perovskites; epitaxy; oxide electronics; thin films; ELECTRICAL-RESISTIVITY; TEMPERATURE-DEPENDENCE; PHYSICAL-PROPERTIES; SRTIO3; FILMS; THIN-FILMS; VANADIUM; GROWTH;

D O I：

10.1002/adma.201300900

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Stoichiometric SrVO3 thin films grown by hybrid molecular beam epitaxy are demonstrated, meeting the stringent requirements of an ideal bottom electrode material. They display an order of magnitude lower room temperature resistivity and superior chemical stability, compared to the commonly employed SrRuO3, as well as atomically smooth surfaces. Excellent structural compatibility with perovskite and related structures renders SrVO3 a high performance electrode material with the potential to promote the creation of new functional oxide electronic devices. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：3578 / 3582

页数：5

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