Flexible Thin-Film Transistors on Plastic Substrate at Room Temperature

被引：7

作者：

Han, Dedong ^{[1
]}

Wang, Wei ^{[1
]}

Cai, Jian ^{[1
]}

Wang, Liangliang ^{[1
]}

Ren, Yicheng ^{[1
]}

Wang, Yi ^{[1
]}

Zhang, Shengdong ^{[2
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Peking Univ, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2013年 / 13卷 / 07期

关键词：

Flexible; Aluminum-Doped Zinc Oxide; Thin-Film Transistor; Room Temperature;

D O I：

10.1166/jnn.2013.7505

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have fabricated flexible thin-film transistors (TFTs) on plastic substrates using Aluminum-doped ZnO (AZO) as an active channel layer at room temperature. The AZO-TFTs showed n-channel device characteristics and operated in enhancement mode. The device shows a threshold voltage of 1.3 V, an on/off ratio of 2.7 x 10(7), a field effect mobility of 21.3 cm(2)/V.s, a subthreshold swing of 0.23 V/decade, and the off current of less than 10(-12) A at room temperature. Recently, the flexible displays have become a very hot topic. Flexible thin film transistors are key devices for realizing flexible displays. We have investigated AZO-TFT on flexible plastic substrate, and high performance flexible TFTs have been obtained.

引用

页码：5154 / 5157

页数：4

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