Electrical Noise and Transport Properties of Graphene

被引：10
作者：
Sun, Nan [1 ]
Tahy, Kristof [2 ]
Xing, Huili [2 ]
Jena, Debdeep [2 ]
Arnold, Gerald [1 ]
Ruggiero, Steven T. [1 ]
机构：
[1] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA
[2] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA
来源：
JOURNAL OF LOW TEMPERATURE PHYSICS | 2013年 / 172卷 / 3-4期
基金：
美国国家科学基金会;
关键词：
Graphene; 1/ f noise; Transport; Tunneling; LOW-FREQUENCY NOISE;
D O I：
10.1007/s10909-013-0866-x
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present a study of the noise properties of single-layer exfoliated graphene as a function of gate bias. A tunnel/trap model is presented based on the interaction of graphene electrons with the underlying substrate. The model incorporates trap position, energy, and barrier height for tunneling into a given trap-along with the band-structure of the graphene-and is in good accord with the general characteristics of the data.
引用
收藏
页码：202 / 211
页数：10
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