Oxygen vacancy induced re-entrant spin glass behavior in multiferroic ErMnO3 thin films

被引：24

作者：

Jang, S. Y. ^{[1
,2
]}

Lee, D. ^{[1
,2
]}

Lee, J. -H. ^{[1
,2
]}

Noh, T. W. ^{[1
,2
]}

Jo, Y. ^{[3
]}

Jung, M. -H. ^{[3
]}

Chung, J. -S. ^{[4
]}

机构：

[1] Seoul Natl Univ, ReCOE, Seoul 151747, South Korea

[2] Seoul Natl Univ, FPRD, Dept Phys & Astron, Seoul 151747, South Korea

[3] Korea Basic Sci Inst, Quantum Mat Res Team, Taejon 305333, South Korea

[4] Soongsil Univ, Dept Phys, Seoul 156743, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 16期

关键词：

D O I：

10.1063/1.3006325

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial thin films of hexagonal ErMnO3 fabricated on Pt(111)/Al2O3(0001) and yttria-stabilized zirconia(111) substrates exhibited both ferroelectric character and magnetic ordering at low temperatures. As the temperature was reduced, the ErMnO3 films first showed antiferromagnetism. At lower temperatures, the films deposited at lower oxygen partial pressures exhibited spin glass behavior. This re-entrant spin glass behavior was attributed to competition between an antiferromagnetic interaction in the hexagonal geometry and a ferromagnetic interaction caused by a change in Mn valence induced by excess electrons from the oxygen vacancies. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3006325]

引用

页数：3

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