Self-Assembled Growth and Characterization of MnxP Nanowires

被引：0

作者：

Sato, Katsuaki ^{[1
,2
]}

Bouravleuv, Alexei ^{[1
,3
]}

Koukitu, Akinori ^{[1
]}

Ishibashi, Takayuki ^{[4
]}

机构：

[1] Tokyo Univ Agr & Technol, Grad Sch Engn, Koganei, Tokyo 1848588, Japan

[2] Japan Sci & Technol Agcy, Off Basic Res, Chiyoda Ku, Tokyo 1020075, Japan

[3] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[4] Nagaoka Univ Technol, Dept Mat Sci & Technol, Niigata 9402188, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 10期

关键词：

nanowire; manganese phosphide; magnetic properties; ellipsometry;

D O I：

10.1143/JJAP.47.8214

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

MnP nanowires have been grown by molecular beam epitaxy (MBE) without any preliminary deposited metal catalyst on Inp(100) and GaAs(111)(B) substrates. Mn was supplied using a conventional Knudsen cell, whereas P-2 was supplied as a gas by the decomposition of tertiary butylphosphine (TBP) using a cracking cell. The self-assembled growth of nanowires was observed when the substrate temperature exceeded 430 degrees C. Nanowires obtained on the InP(100) surface had diameters close to 150nm, lengths of up to 2 mu m, whereas nanowires grown on the GaAs(111)(B) surface had widths of up to 600nm, lengths of up to 30 mu m, and clear atomic facets. Magnetic and optical characterizations were also carried out. [DOI: 10.1143/JJAP.47.8214]

引用

页码：8214 / 8217

页数：4

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