Self-Assembled Growth and Characterization of MnxP Nanowires

MnP nanowires have been grown by molecular beam epitaxy (MBE) without any preliminary deposited metal catalyst on Inp(100) and GaAs(111)(B) substrates. Mn was supplied using a conventional Knudsen cell, whereas P-2 was supplied as a gas by the decomposition of tertiary butylphosphine (TBP) using a cracking cell. The self-assembled growth of nanowires was observed when the substrate temperature exceeded 430 degrees C. Nanowires obtained on the InP(100) surface had diameters close to 150nm, lengths of up to 2 mu m, whereas nanowires grown on the GaAs(111)(B) surface had widths of up to 600nm, lengths of up to 30 mu m, and clear atomic facets. Magnetic and optical characterizations were also carried out. [DOI: 10.1143/JJAP.47.8214]