AlxGa1-xN (0<=x<=1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition.

被引：128

作者：

Walker, D ^{[1
]}

Zhang, X ^{[1
]}

Saxler, A ^{[1
]}

Kung, P ^{[1
]}

Xu, J ^{[1
]}

Razeghi, M ^{[1
]}

机构：

[1] USAF,WRIGHT LAB,MAT DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 08期

关键词：

D O I：

10.1063/1.118450

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlxGa1-xN (0 less than or equal to x less than or equal to 1) ultraviolet photoconductors with cutoff wavelengths from 365 to 200 nm have been fabricated and characterized. The maximum detectivity reached 5.5 x 10(8) cmHz(1/2)/W at a modulating frequency of 14 Hz. The effective majority carrier lifetime in AlxGa1-xN materials, derived from frequency-dependent photoconductivity measurements, has been estimated to be from 6 to 35 ms. The frequency-dependent noise spectrum shows that it is dominated by Johnson noise at high frequencies for low-Al-composition samples. (C) 1997 American Institute of Physics.

引用

页码：949 / 951

页数：3

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