Effect of Si doping on optical and thermal properties of MOVPE GaN thin layers

被引：4

作者：

Saadallah, Faycel ^{[1
]}

Benzarti, Zohra ^{[2
]}

Halidou, Ibrahim ^{[2
]}

Yacoubi, Noureddine ^{[1
]}

El Jani, Belgacem ^{[2
]}

机构：

[1] IPEIN Nabeul, Unite Photothermie & Composants Elect, Tunis, Tunisia

[2] Fac Sci Monastir, Unite Rech HeteroEpitaxies & Applicat URHEA, Tunis, Tunisia

来源：

OPTIK | 2013年 / 124卷 / 23期

关键词：

GaN; Si doping; Defects; Optical absorption; Thermal conductivity; Photothermal deflection; PHOTOTHERMAL DEFLECTION SPECTROSCOPY; FILMS; CONDUCTIVITY; ABSORPTION; GROWTH; RAMAN;

D O I：

10.1016/j.ijleo.2013.04.087

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Photothermal deflection spectroscopy is used to investigate thermal and optical properties of MOVPE grown GaN thin layers deposited on sapphire substrate. The effects of Si doping on absorption spectrum and gap energy are revealed. Also, doping-induced free carrier absorption is extracted from absorption in the sub-gap region. Moreover, the variations of photothermal signal versus modulation frequency are used to determine thermal properties of these films. The measured thermal conductivity is clearly decreased by Si doping, the main reason should be the phonon scattering on point defects. (C) 2013 Elsevier GmbH. All rights reserved.

引用

页码：6190 / 6193

页数：4

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