Power Supply Clamp for Multi-Domain Mixed-Signal SiGe BiCMOS Applications

被引：0

作者：

Salcedo, Javier A. ^{[1
]}

Parthasarathy, Srivatsan ^{[1
]}

Hajjar, Jean-Jacques ^{[1
]}

机构：

[1] Analog Devices Inc, Wilmington, MA USA

来源：

2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2013年

关键词：

SiGe BiCMOS Technology; Supply Clamp; High Speed RF Amplifier; Low Noise Amplifier; Microwave Transceiver; Wireless Infrastructure; Electrostatic Discharge (ESD);

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An active power supply clamp for precision high speed SiGe BiCMOS applications is introduced. The clamp architecture includes functional blocks for transient stress detection, stress-adapted activation feedback and mistriggering control. Electrostatic discharge (ESD) robustness is demonstrated in high speed/high voltage BiCMOS SiGe applications operating at supply voltages beyond the breakdown voltage constraint in the bipolar signal processing blocks during ESD stress.

引用

页数：6

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