Power Supply Clamp for Multi-Domain Mixed-Signal SiGe BiCMOS Applications

被引：0
|
作者：
Salcedo, Javier A. [1 ]
Parthasarathy, Srivatsan [1 ]
Hajjar, Jean-Jacques [1 ]
机构：
[1] Analog Devices Inc, Wilmington, MA USA
来源：
2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2013年
关键词：
SiGe BiCMOS Technology; Supply Clamp; High Speed RF Amplifier; Low Noise Amplifier; Microwave Transceiver; Wireless Infrastructure; Electrostatic Discharge (ESD);
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An active power supply clamp for precision high speed SiGe BiCMOS applications is introduced. The clamp architecture includes functional blocks for transient stress detection, stress-adapted activation feedback and mistriggering control. Electrostatic discharge (ESD) robustness is demonstrated in high speed/high voltage BiCMOS SiGe applications operating at supply voltages beyond the breakdown voltage constraint in the bipolar signal processing blocks during ESD stress.
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页数：6
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