Band Line-up Investigation of Atomic Layer Deposited TiAlO and GaAlO on GaN

被引：6

作者：

Das, Partha ^{[1
]}

Jones, Leanne A. H. ^{[2
,3
,4
]}

Gibbon, James T. ^{[3
,4
]}

Dhanak, Vinod R. ^{[3
,4
]}

Partida-Manzanera, Teresa ^{[5
]}

Roberts, Joseph W. ^{[5
]}

Potter, Richard ^{[5
]}

Chalker, Paul R. ^{[5
]}

Cho, Sung-Jin ^{[6
]}

Thayne, Iain G. ^{[6
]}

Mahapatra, Rajat ^{[1
]}

Mitrovic, Ivona Z. ^{[2
]}

机构：

[1] Natl Inst Technol Durgapur, Dept Elect & Commun Engn, Durgapur 713209, India

[2] Univ Liverpool, Dept Elect Engn & Elect, Liverpool L69 3GJ, Merseyside, England

[3] Univ Liverpool, Dept Phys, Liverpool L69 7ZF, Merseyside, England

[4] Univ Liverpool, Stephenson Inst Renewable Energy, Liverpool L69 7ZF, Merseyside, England

[5] Univ Liverpool, Sch Engn, Liverpool L69 3GH, Merseyside, England

[6] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2020年 / 9卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

GaN; Dielectrics; High-k; Atomic layer deposition; X-ray photoelectron spectroscopy; Band offsets; Kraut method; Metal insulator semiconductor capacitor; ELECTRICAL PERFORMANCE; THIN-FILM; TRANSISTORS; INTERFACE; AL2O3; XPS; SPECTRA; GROWTH; HFO2; SI;

D O I：

10.1149/2162-8777/aba4f4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A comprehensive study of the band alignments of TixAl1-xOy(with x = 9%, 16%, 25%, 36%, 100%) and GaxAl1-xOy(x = 5%, 20%, 80% and 95%) fabricated using atomic layer deposition on GaN has been presented using X-ray photoelectron spectroscopy and variable angle spectroscopic ellipsometry. The permittivity, k, has been found to be enhanced from similar to 10 for 9% Ti in Ti(x)Al(1-x)O(y)to 76 for TiO2, however TiO(2)brings an unfavorable band alignment and a small conduction band offset (<0.1 eV) with GaN. The latter has been observed for all studied Ti(x)Al(1-x)O(y)films deposited on GaN. On the other hand, Ga(x)Al(1-x)O(y)films show a substantial increase of the band gap from 4.5 eV for Ga(2)O(3)to 5.5 eV for x = 20% Ga and 6.0 eV for x = 5% Ga. A strong suppression of leakage current in associated GaxAl1-xOy-based metal insulator semiconductor capacitors has also been observed, showing promise for device applications.

引用

页数：10

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