High-Quality Large-Area Graphene from Dehydrogenated Polycyclic Aromatic Hydrocarbons

被引:130
作者
Wan, Xi [1 ,2 ]
Chen, Kun [1 ,2 ]
Liu, Danqing [3 ]
Chen, Jian [4 ]
Miao, Qian [3 ]
Xu, Jianbin [1 ,2 ]
机构
[1] Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China
[2] Chinese Univ Hong Kong, Mat Sci & Technol Res Ctr, Hong Kong, Hong Kong, Peoples R China
[3] Chinese Univ Hong Kong, Dept Chem, Hong Kong, Hong Kong, Peoples R China
[4] Sun Yat Sen Univ, Instrumental Anal & Res Ctr, Guangzhou 510275, Guangdong, Peoples R China
基金
美国国家科学基金会;
关键词
graphene; growth; PAHs; coronene; pentacene; rubrene; first-principles; FIELD-EFFECT TRANSISTORS; GROWTH; PERFORMANCE; SINGLE; NANORIBBONS; STABILITY; SUBSTRATE; MOBILITY; QUANTUM; FILMS;
D O I
10.1021/cm301993z
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Recent studies show that, at the initial stage of chemical vapor deposition (CVD) of graphene, the isolated carbon monomers will form defective carbon clusters with pentagons that degrade the quality of synthesized graphene. To circumvent this problem, we demonstrate that high-quality centimeter-sized graphene sheets can be synthesized on Cu foils by a self-assembled approach from defect-free polycyclic aromatic hydrocarbons (PAHs) in a high vacuum (HV) chamber without hydrogen. Different molecular motifs, namely coronene, pentacene, and rubrene, can lead to significant difference in the quality of resulting graphene. For coronene, monolayer graphene flakes with an adequate quality can be achieved at a growth temperature as low as 550 degrees C. For the graphene obtained at 1000 degrees C, transport measurements performed on back-gated field-effect transistors (FETs) with large channel lengths (similar to 30 mu m) exhibit a carrier mobility up to similar to 5300 cm(2) V-1 s(-1) sat room temperature. The underlying growth mechanism, which mainly involves surface-mediated nucleation process of dehydrogenated PAHs rather than segregation or precipitation process of small carbon species decomposed from the precursors, has been systematically investigated through the first-principles calculations. Our findings pave the way for optimizing selection of solid carbon precursors and open up a new route for graphene synthesis.
引用
收藏
页码:3906 / 3915
页数:10
相关论文
共 50 条
[1]   A self-consistent theory for graphene transport [J].
Adam, Shaffique ;
Hwang, E. H. ;
Galitski, V. M. ;
Das Sarma, S. .
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2007, 104 (47) :18392-18397
[2]   Electronic confinement and coherence in patterned epitaxial graphene [J].
Berger, Claire ;
Song, Zhimin ;
Li, Xuebin ;
Wu, Xiaosong ;
Brown, Nate ;
Naud, Cecile ;
Mayou, Didier ;
Li, Tianbo ;
Hass, Joanna ;
Marchenkov, Atexei N. ;
Conrad, Edward H. ;
First, Phillip N. ;
de Heer, Wait A. .
SCIENCE, 2006, 312 (5777) :1191-1196
[3]   Atomically precise bottom-up fabrication of graphene nanoribbons [J].
Cai, Jinming ;
Ruffieux, Pascal ;
Jaafar, Rached ;
Bieri, Marco ;
Braun, Thomas ;
Blankenburg, Stephan ;
Muoth, Matthias ;
Seitsonen, Ari P. ;
Saleh, Moussa ;
Feng, Xinliang ;
Muellen, Klaus ;
Fasel, Roman .
NATURE, 2010, 466 (7305) :470-473
[4]   Synthesis of Large-Area Graphene Layers on Poly-Nickel Substrate by Chemical Vapor Deposition: Wrinkle Formation [J].
Chae, Seung Jin ;
Guenes, Fethullah ;
Kim, Ki Kang ;
Kim, Eun Sung ;
Han, Gang Hee ;
Kim, Soo Min ;
Shin, Hyeon-Jin ;
Yoon, Seon-Mi ;
Choi, Jae-Young ;
Park, Min Ho ;
Yang, Cheol Woong ;
Pribat, Didier ;
Lee, Young Hee .
ADVANCED MATERIALS, 2009, 21 (22) :2328-+
[5]  
Chiu P.W., 2011, ACS NANO, V5, P2362
[6]   Formation of identical-size graphene nanoclusters on Ru(0001) [J].
Cui, Yi ;
Fu, Qiang ;
Zhang, Hui ;
Bao, Xinhe .
CHEMICAL COMMUNICATIONS, 2011, 47 (05) :1470-1472
[7]   Chemical Doping and Electron-Hole Conduction Asymmetry in Graphene Devices [J].
Farmer, Damon B. ;
Golizadeh-Mojarad, Roksana ;
Perebeinos, Vasili ;
Lin, Yu-Ming ;
Tulevski, George S. ;
Tsang, James C. ;
Avouris, Phaedon .
NANO LETTERS, 2009, 9 (01) :388-392
[8]   Raman spectrum of graphene and graphene layers [J].
Ferrari, A. C. ;
Meyer, J. C. ;
Scardaci, V. ;
Casiraghi, C. ;
Lazzeri, M. ;
Mauri, F. ;
Piscanec, S. ;
Jiang, D. ;
Novoselov, K. S. ;
Roth, S. ;
Geim, A. K. .
PHYSICAL REVIEW LETTERS, 2006, 97 (18)
[9]  
Hofrichter J, 2010, NANO LETT, V10, P36, DOI [10.1021/nl902558x, 10.1021/nl902558X]
[10]   Evidence of the role of contacts on the observed electron-hole asymmetry in graphene [J].
Huard, B. ;
Stander, N. ;
Sulpizio, J. A. ;
Goldhaber-Gordon, D. .
PHYSICAL REVIEW B, 2008, 78 (12)