Theoretical optimization of multi-layer InAs/GaAs quantum dots subject to post-growth thermal annealing for tailoring the photoluminescence emission beyond 1.3 μm

被引：5

作者：

Ghosh, K. ^{[1
]}

Naresh, Y. ^{[2
]}

Reddy, N. Srichakradhar ^{[1
]}

机构：

[1] VIT Univ, Sch Elect Engn SENSE, Vellore 632014, Tamil Nadu, India

[2] Anna Univ Technol, Nanotechnol Dept, Coimbatore 641047, Tamil Nadu, India

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 02期

关键词：

STRAIN; NANOSTRUCTURES; THICKNESS; LAYER; SHAPE;

D O I：

10.1063/1.4739457

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we present theoretical analysis and computation for tuning the ground state (GS) photoluminescence (PL) emission of InAs/GaAs quantum dots (QDs) at telecommunication window of 1.3-1.55 mu m by optimizing its height and base dimensions through quantum mechanical concepts. For this purpose, numerical modelling is carried out to calculate the quantized energy states of finite dimensional QDs so as to obtain the GS PL emission at or beyond 1.3 mu m. Here, we also explored strain field altering the QD size distribution in multilayer heterostructure along with the changes in the PL spectra, simulation on post growth thermal annealing process which blueshifts the operating wavelength away from the vicinity of 1.3 mu m and improvement of optical properties by varying the thickness of GaAs spacing. The results are discussed in detail which will serve as an important information tool for device scientist fabricating high quality semiconductor quantum structures with reduced defects at telecommunication wavelengths. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739457]

引用

页数：7

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