Voltage-Dependent Temperature Coefficient of the I-V Curves of Crystalline Silicon Photovoltaic Modules

被引：41

作者：

Hishikawa, Yoshihiro ^{[1
]}

Doi, Takuya ^{[1
]}

Higa, Michiya ^{[1
]}

Yamagoe, Kengo ^{[1
]}

Ohshima, Hironori ^{[1
]}

Takenouchi, Takakazu ^{[1
]}

Yoshita, Masahiro ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta, Tsukuba, Ibaraki 3058568, Japan

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2018年 / 8卷 / 01期

关键词：

Crystalline silicon; I-V curve; p-n junction diode; temperature coefficient (TC); translation; SOLAR-CELLS; PV MODULES;

D O I：

10.1109/JPHOTOV.2017.2766529

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The temperature dependence of the I-V curves of various kinds of commercial crystalline silicon photovoltaic modules is investigated, based on experiments by using a solar simulator and a thermostatic chamber. The temperature coefficient (TC) of the output voltage of the modules with p-n junction technology is found to closely agree with a formula as a function of their output voltage per cell and temperature, throughout the voltage range of about 0.5-0.7 V per cell, which is important for estimating the P-max, fill factor, and V-oc of the modules. The formula is derived from a one-diode model, and reproduces the TC of the I-V curves within +/- 5% relative error without adjusting the parameter for each module. The formula is successfully applied for translating the modules' I-V curves.

引用

页码：48 / 53

页数：6

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