Growth optimization of GaSb/GaAs self-assembled quantum dots grown by MOCVD

被引：9

作者：

Motlan ^{[1
]}

Goldys, EM ^{[1
]}

Tansley, TL ^{[1
]}

机构：

[1] Macquarie Univ, Semicond Sci & Technol Labs, Sydney, NSW 2109, Australia

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 236卷 / 04期

关键词：

metalorganic chemical vapor epitaxy; quantum dots; self-assembled growth;

D O I：

10.1016/S0022-0248(02)00845-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Metalorganic chemical vapour deposition growth of GaSb self-assembled quantum dots (QDs) on GaAs substrates was optimized with respect to their geometry. The results show that the size and density of the dots can be controlled by growth temperature, growth time and the dilution of the growth precursors. The dot width of 40 run, the height of 4 nm and the density in the order of 10(10)cm(-2) can be achieved. These results are comparable with GaSb/GaAs QDs grown by molecular beam epitaxy. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：621 / 626

页数：6

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