Influence of grain size at first monolayer on bias-stress effect in pentacene-based thin film transistors

被引：15
作者：
Zhang, Yiwei [1 ]
Li, Dexing [1 ]
Jiang, Chao [1 ]
机构：
[1] Natl Ctr Nanosci & Technol, CAS Key Lab Standardizat & Measurement Nanotechno, Beijing 100190, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 21期
基金：
中国国家自然科学基金;
关键词：
FIELD-EFFECT TRANSISTORS; THRESHOLD VOLTAGE; TRANSPORT; DIELECTRICS; PERFORMANCE; NUCLEATION; MORPHOLOGY;
D O I：
10.1063/1.4833251
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Threshold voltage shift under applied gate voltage is a key factor characterizing stability of organic thin-film transistors (OTFTs), while the physical mechanism is still controversial. In this study, we systematically examined the initial growth of pentacene polycrystalline films under different growth rates. Bias stress performance of the fabricated pentacene-based OTFTs was found to be highly related to the initial gain size of the pentacene films. Larger grain size at the first deposition layer led to smaller threshold voltage shift. The quantitative correlation can be described by a two-dimensional microscopic mobility model relating to the grains and grain boundaries. (C) 2013 AIP Publishing LLC.
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页数：4
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