AlInN/GaN diodes for power electronic devices

AlInN/GaN power diodes consisting of a p-type GaN and a 300 nm thick n-type AlInN drift layer are demonstrated. The p-n junction is grown using metalorganic chemical vapor deposition, and the AlxIn1-xN drift layer is lattice-matched to GaN (x similar to 0.82) with an electron concentration of similar to 8 x 10(16) cm(-3)after correcting for the 2-dimensional electron gas. The diodes exhibit similar to-60 V blocking capability. Under forward bias, the diode has a turn-on voltage of similar to 4 V. If experimental challenges are overcome, the ultrawide bandgap and high mobility of an AlInN drift layer could increase the performance of GaN-based power devices.