A General and Reliable Model for Charge Pumping-Part II: Application to the Study of Traps in SiO2 or in High-κ Gate Stacks

被引：11

作者：

Bauza, Daniel ^{[1
]}

机构：

[1] MINATEC, CNRS, Inst Microelect Electromagnetism & Photon, LAHC,IHP Grenoble,UJF, F-38016 Grenoble 1, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 01期

关键词：

Charge pumping (CP); high-kappa gate stacks; model; MOSFETs; oxide traps; Si-SiO2; interface; trap profiles; INTERFACE; EXTRACTION; PROFILES;

D O I：

10.1109/TED.2008.2009024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The knowledge of the oxide trap characteristics, i.e., density, energy, and depth position, is of great interest not only for MOSFET with SiO2 but also for those with high-K gate stacks. Using the general charge pumping model derived in Part I, this paper focuses on capture by tunneling and on the energy and depth regions probed in the experimental conditions that may allow the extraction of trap depth concentration profiles in the insulators. The impact on these regions of the asymmetry between the band offsets and of the electric field is studied.

引用

收藏

页码：78 / 84

页数：7

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