Tapered Amplifiers for High-Power MOPA Setups between 750nm and 2000nm

被引：5

作者：

Ogrodowski, L. ^{[1
]}

Friedmann, P. ^{[1
]}

Gilly, J. ^{[1
]}

Kelemen, M. T. ^{[1
]}

机构：

[1] Coherent DILAS GmbH, Hermann Mitsch Str 36a, D-79108 Freiburg, Germany

来源：

NOVEL IN-PLANE SEMICONDUCTOR LASERS XIX | 2020年 / 11301卷

关键词：

diode laser; high-brightness; high-power; tapered laser; tapered amplifier; semiconductor; eye-safe; MU-M; DIODE-LASERS;

D O I：

10.1117/12.2547334

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Semiconductor laser diodes with a tapered gain region provide a beam quality near to the diffraction limit combined with high output power. They can be configured as lasers with a high-reflectivity coating on the rear facet as well as amplifiers with an antireflection coating on both facets. In amplifier configuration, they can be used in external cavity or Master-Oscillator-Power-Amplifier configuration with the advantage of a narrow linewidth. Today amplifiers are commercially established with an optical output-power of 1-3W in a wide range of applications in quantum optics, metrology or spectroscopy. By extension of the resonator length up to 5mm combined with optimised processing and coating a new class of high-power tapered amplifiers at different wavelengths between 750nm and 1060nm for master-oscillator-power amplifier configurations of 4-5W output power will be presented. In addition, the tapered concept has been successfully transferred to InP and GaSb based material systems to address the eye-safe spectral range between 1500 and 2000nm. Nearly diffraction limited tapered amplifiers and lasers will be demonstrated in the 1W power range for 1530nm, 1550nm and 1930nm.

引用

页数：11

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