The Valence Band Offset of an Al0.17Ga0.83N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy

被引：3

作者：

Wan Xiao-Jia ^{[1
]}

Wang Xiao-Liang ^{[1
,2
,3
]}

Xiao Hong-Ling ^{[1
]}

Wang Cui-Mei ^{[1
]}

Feng Chun ^{[1
]}

Deng Qing-Wen ^{[1
]}

Qu Shen-Qi ^{[1
]}

Zhang Jing-Wen ^{[3
]}

Hou Xun ^{[3
]}

Cai Shu-Jun ^{[4
]}

Feng Zhi-Hong ^{[4
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China

[3] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Xian 710049, Peoples R China

[4] Natl Key Lab ASIC, Shijiazhuang 050051, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2013年 / 30卷 / 05期

基金：

中国国家自然科学基金;

关键词：

ALN; GAN; DISCONTINUITIES;

D O I：

10.1088/0256-307X/30/5/057101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The valence band offset (VBO) of an Al0.17Ga0.83N/GaN heterojunction is determined to be 0.13 +/- 0.07 eV by x-ray photoelectron spectroscopy. From the obtained VBO value, the conduction band offset (CBO) of similar to 0.22 eV is obtained. The results indicate that the Al0.17Ga0.83N/GaN heterojunction exhibits a type-I band alignment.

引用

页数：3

共 43 条

[41] In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle treatments on HF-treated and O3-oxidized GaN substrates
Sivasubramani, Prasanna
Park, Tae Joo
Coss, Brian E.
Lucero, Antonio
Huang, Jie
Brennan, Barry
Cao, Yu
Jena, Debdeep
Xing, Huili
Wallace, Robert M.
Kim, Jiyoung
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2012, 6 (01): : 22 - 24
[42] Influence of substrate misorientation on the emission and waveguiding properties of a blue (In,Al,Ga)N laser-like structure studied by synchrotron radiation microbeam X-ray diffraction
Kafar, A.
Sakaki, A.
Ishii, R.
Stanczyk, S.
Gibasiewicz, K.
Matsuda, Y.
Schiavon, D.
Grzanka, S.
Suski, T.
Perlin, P.
Funato, M.
Kawakami, Y.
PHOTONICS RESEARCH, 2021, 9 (03) : 299 - 307
[43] Band offsets in complex-oxide thin films and heterostructures of SrTiO3/LaNiO3 and SrTiO3/GdTiO3 by soft and hard X-ray photoelectron spectroscopy
Conti, G.
Kaiser, A. M.
Gray, A. X.
Nemsak, S.
Palsson, G. K.
Son, J.
Moetakef, P.
Janotti, A.
Bjaalie, L.
Conlon, C. S.
Eiteneer, D.
Greer, A. A.
Keqi, A.
Rattanachata, A.
Saw, A. Y.
Bostwick, A.
Stolte, W. C.
Gloskovskii, A.
Drube, W.
Ueda, S.
Kobata, M.
Kobayashi, K.
Van de Walle, C. G.
Stemmer, S.
Schneider, C. M.
Fadley, C. S.
JOURNAL OF APPLIED PHYSICS, 2013, 113 (14)

← 1 2 3 4 5 →