The Valence Band Offset of an Al0.17Ga0.83N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy

被引:3
|
作者
Wan Xiao-Jia [1 ]
Wang Xiao-Liang [1 ,2 ,3 ]
Xiao Hong-Ling [1 ]
Wang Cui-Mei [1 ]
Feng Chun [1 ]
Deng Qing-Wen [1 ]
Qu Shen-Qi [1 ]
Zhang Jing-Wen [3 ]
Hou Xun [3 ]
Cai Shu-Jun [4 ]
Feng Zhi-Hong [4 ]
机构
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China
[3] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Xian 710049, Peoples R China
[4] Natl Key Lab ASIC, Shijiazhuang 050051, Peoples R China
基金
中国国家自然科学基金;
关键词
ALN; GAN; DISCONTINUITIES;
D O I
10.1088/0256-307X/30/5/057101
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The valence band offset (VBO) of an Al0.17Ga0.83N/GaN heterojunction is determined to be 0.13 +/- 0.07 eV by x-ray photoelectron spectroscopy. From the obtained VBO value, the conduction band offset (CBO) of similar to 0.22 eV is obtained. The results indicate that the Al0.17Ga0.83N/GaN heterojunction exhibits a type-I band alignment.
引用
收藏
页数:3
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