DC and AC electrical characteristics of porous GaAs/p+-GaAs heterostructure

被引：18

作者：

Beji, L ^{[1
]}

Ben Jomaa, T ^{[1
]}

Harrabi, Z ^{[1
]}

Laribi, A ^{[1
]}

Missaoui, A ^{[1
]}

Bouazizi, A ^{[1
]}

机构：

[1] Fac Sci Monastir, Lab Phys & Chim Interfaces, Monastir 5019, Tunisia

来源：

VACUUM | 2006年 / 80卷 / 05期

关键词：

porous GaAs; electrical measurements;

D O I：

10.1016/j.vacuum.2005.08.024

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports on studying Au/porous GaAs/p(+)-GaAs heterostructure through current-voltage I (V), conductance- and capacitance-frequency dependencies (G (f) and C (f)). Diode parameters such as ideality factor and zero bias barrier energy have been calculated by using Schottky model corrected from the series resistance. The obtained ideality factor is generally high and it was explained by space charge limited current (SCLC) regime, characterised by the presence of single trapping level. A model based upon TFE tunnelling of carriers at reverse current was used to explain the non-saturation of reverse current after series resistance correction. The G (f) characteristics exhibit the presence of three frequency regions. In the first region the conductance is independent of frequency. Moreover, in the second region the AC conductance increases with increasing frequency and approximately follows omega(s) dependence. These results were interpreted as the result of the transport of injected carrier via hopping mechanism involving defect. In the third region a peak conductance appeared after which the conductance decreased with increasing frequency. C (f) measurements exhibit that the capacitance behaviour is typical of material with traps. From G (f) and C (f) measurement trap density and relaxation time were calculated. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：480 / 487

页数：8

共 31 条

[11] Molecular beam epitaxial growth of strained Si1-xGex layers on graded Si1-yGey for Pt silicide Schottky diodes [J].

Dentel, D ;

Kubler, L ;

Bischoff, JL ;

Chattopadhyay, S ;

Bera, LK ;

Ray, SK ;

Maiti, CK .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (02) :214-219

[12] Electrical, photoelectrical and electroluminescent properties of porous Si-c-Si heterojunctions [J].

DimovaMalinovska, D ;

Tzolov, M ;

Tzenov, N ;

Nesheva, D .

THIN SOLID FILMS, 1997, 297 (1-2) :285-290

[13] Passivation of Al/Si interface by chemical treatment:: Schottky barrier height and plasma etch induced defects [J].

Horváth, ZJ ;

Adám, M ;

Godio, P ;

Borionetti, G ;

Szabó, I ;

Gombia, E ;

Van Tuyen, V .

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2002, 82-84 :255-258

[14] Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures [J].

Hudait, MK ;

Krupanidhi, SB .

PHYSICA B-CONDENSED MATTER, 2001, 307 (1-4) :125-137

[15] Effective carrier density in porous silicon carbide [J].

Ivanov, PA ;

Mynbaeva, MG ;

Saddow, SE .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (03) :319-322

[16]

Jonscher A. K., 1972, Journal of Non-Crystalline Solids, V8-10, P293, DOI 10.1016/0022-3093(72)90151-2

[17] Charge transport in porous silicon: Considerations for achievement of efficient electroluminescence [J].

Kocka, J ;

Oswald, J ;

Fejfar, A ;

Sedlacik, R ;

Zelezny, V ;

TheHa, H ;

Luterova, K ;

Pelant, I .

THIN SOLID FILMS, 1996, 276 (1-2) :187-190

[18] Fabrication and electrical characteristics of polymer-based Schottky diode [J].

Liang, GR ;

Cui, TH ;

Varahramyan, K .

SOLID-STATE ELECTRONICS, 2003, 47 (04) :691-694

[19]

NICOLLIAN EH, 1967, BELL SYST TECH J, V46, P46

[20] Carrier transport in porous silicon light-emitting devices [J].

Peng, C ;

Hirschman, KD ;

Fauchet, PM .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (01) :295-300

← 1 2 3 4 →