A new geometrical approach for rapid LED processing by using femtosecond laser

被引：3

作者：

Reklaitis, I. ^{[1
]}

Grinys, T. ^{[1
]}

Tomasiunas, R. ^{[1
]}

Puodziunas, T. ^{[2
]}

Mazule, L. ^{[2
]}

Sirutkaitis, V. ^{[2
]}

Lin, C. H. ^{[3
]}

Yang, C. C. ^{[3
]}

机构：

[1] Vilnius Univ, Inst Appl Res, Sauletekio 10, LT-10223 Vilnius, Lithuania

[2] Vilnius Univ, Ctr Laser, LT-10223 Vilnius, Lithuania

[3] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

来源：

OPTICS AND LASERS IN ENGINEERING | 2015年 / 74卷

关键词：

Femtosecond laser; Processing; Trench; Light-emitting diode; GaN; ABLATION; PICOSECOND; SURFACE;

D O I：

10.1016/j.optlaseng.2015.05.002

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A new original method to reduce time and resource consuming photolithography mask production operations has been suggested. By means of femtosecond laser direct writing, thus, gaining cleaner surrounding than for nano- and pico-second pulse processing, a 45 degrees angle ablation geometry has been proven. LED chip separation trenches and n-GaN layer exposure were made simultaneously saving from one fundamental processing and alignment step without adverse effect from the laser-processing on the quantum well region. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：17 / 21

页数：5

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