Imaging Andreev Reflection in Graphene

被引:16
|
作者
Bhandari, Sagar [1 ,3 ]
Lee, Gil-Ho [2 ,4 ]
Watanabe, Kenji [5 ]
Taniguchi, Takashi [5 ]
Kim, Philip [1 ,2 ]
Westervelt, Robert M. [1 ,2 ]
机构
[1] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA
[2] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
[3] Slippery Rock Univ, Dept Phys & Engn, Slippery Rock, PA 16057 USA
[4] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea
[5] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
关键词
graphene; Andreev reflection; ballistic transport; scanning gate microscope; CYCLOTRON ORBITS; QUANTUM; EDGE; SUPERCURRENT; FLOW;
D O I
10.1021/acs.nanolett.0c00903
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Coherent charge transport along ballistic paths can be introduced into graphene by Andreev reflection, for which an electron reflects from a superconducting contact as a hole, while a Cooper pair is transmitted. We use liquid-helium cooled scanning gate microscopy (SGM) to image Andreev reflection in graphene in the magnetic focusing regime, where carriers move along cyclotron orbits between contacts. Images of flow are obtained by deflecting carrier paths and displaying the resulting change in conductance. When electrons enter the superconductor, Andreev-reflected holes leave for the collecting contact. To test the results, we destroy Andreev reflection with a large current and by heating above the critical temperature. In both cases, the reflected carriers change from holes to electrons.
引用
收藏
页码:4890 / 4894
页数:5
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