Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications

被引：29

作者：

Makowski, M. S. ^{[1
,2
]}

Kim, S. ^{[3
]}

Gaillard, M. ^{[4
]}

Janes, D. ^{[3
]}

Manfra, M. J. ^{[3
,5
,6
]}

Bryan, I. ^{[7
]}

Sitar, Z. ^{[7
]}

Arellano, C. ^{[8
]}

Xie, J. ^{[9
]}

Collazo, R. ^{[7
]}

Ivanisevic, A. ^{[7
,10
]}

机构：

[1] Purdue Univ, Weldon Sch Biomed Engn, W Lafayette, IN 47907 USA

[2] Indiana Univ Sch Med, Indianapolis, IN 46202 USA

[3] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[4] Clemson Univ, Dept Bioengn, Clemson, SC 29634 USA

[5] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA

[6] Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA

[7] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[8] N Carolina State Univ, Dept Stat, Raleigh, NC 27695 USA

[9] HexaTech Inc, Morrisville, NC 27560 USA

[10] Univ N Carolina, N Carolina State Univ, Joint Dept Biomed Engn, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 07期

关键词：

FIELD-EFFECT TRANSISTORS; MICROARRAYS; SENSOR; GAN;

D O I：

10.1063/1.4791788

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaN/GaN high electron mobility transistors (HEMTs) were used to measure electrical characteristics of physisorbed gold nanoparticles (Au NPs) functionalized with alkanethiols with a terminal methyl, amine, or carboxyl functional group. Additional alkanethiol was physisorbed onto the NP treated devices to distinguish between the effects of the Au NPs and alkanethiols on HEMT operation. Scanning Kelvin probe microscopy and electrical measurements were used to characterize the treatment effects. The HEMTs were operated near threshold voltage due to the greatest sensitivity in this region. The Au NP/HEMT system electrically detected functional group differences on adsorbed NPs which is pertinent to biosensor applications. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791788]

引用

页数：5

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