Review-Cobalt Thin Films: Trends in Processing Technologies and Emerging Applications

被引：43
|
作者：
Kaloyeros, Alain E. [1 ]
Pan, Youlin [2 ]
Goff, Jonathan [2 ]
Arkles, Barry [2 ]
机构：
[1] SUNY Polytech Inst, Albany, NY 12203 USA
[2] Gelest Inc, Morrisville, PA 19067 USA
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2019年 / 8卷 / 02期
关键词：
ATOMIC LAYER DEPOSITION; CHEMICAL-VAPOR-DEPOSITION; TRANSITION-METAL-COMPLEXES; THERMAL-PROPERTIES; MOCVD PRECURSOR; CO; PLASMA; OXIDE; DICOBALT; CHEMISTRY;
D O I：
10.1149/2.0051902jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Cobalt metallic films are the subject of an ever-expanding academic and industrial interest for incorporation into a multitude of new technological applications. This report reviews the state-of-the art chemistry and deposition techniques for cobalt thin films, highlighting innovations in cobalt metal-organic chemical vapor deposition (MOCVD), plasma and thermal atomic layer deposition (ALD), as well as pulsed MOCVD technologies, and focusing on cobalt source precursors, thin and ultrathin film growth processes, and the resulting effects on film composition, resistivity and other pertinent properties. (C) The Author(s) 2019. Published by ECS.
引用
收藏
页码：P119 / P152
页数：34
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