P-N Junction creation in 6H-SiC by aluminum implantation

被引：3

作者：

Ottaviani, L

Locatelli, ML

Planson, D

Isoird, K

Chante, JP

Morvan, E

Godignon, P

机构：

[1] Inst Natl Sci Appl, CEGELY, F-69621 Villeurbanne, France

[2] UAB, Ctr Nacl Microelect, Barcelona 08193, Spain

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 61-2卷

关键词：

implantation; furnace annealing; recrystallization; diode characteristics;

D O I：

10.1016/S0921-5107(98)00547-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bipolar diodes, protected with junction termination extensions, were processed in 6H-SiC. A 5-fold aluminum implantation was carried out for the main p(+)-n junction creation, which led to the material amorphization. The recrystallization variation with the annealing temperature and duration is examined in this paper. We performed the Al implantations with apposite energy orders, in order to study their influence on the diode electrical characteristics. The increasing order led to a better forward conduction. and reverse leakage currents more important. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：424 / 428

页数：5

共 5 条

[1] Electronic structure of acceptors in silicon carbide [J].

Baranov, PG .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :581-586

[2]

ORTOLLAND S, 1997, THESIS INSA, P249

[3] Energy order effect of aluminum multiple implantation in 6H-SiC [J].

Ottaviani, L ;

Morvan, E ;

Locatelli, ML ;

Godignon, P ;

Chante, JP .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :697-700

[4]

Troffer T, 1997, PHYS STATUS SOLIDI A, V162, P277, DOI 10.1002/1521-396X(199707)162:1<277::AID-PSSA277>3.0.CO

[5]

2-C

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