Metallic conductivity and metal-semiconductor transition in Ga-doped ZnO

被引：256

作者：

Bhosle, V ^{[1
]}

Tiwari, A ^{[1
]}

Narayan, J ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2165281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter reports the metallic conductivity in Ga:ZnO system at room temperature and a metal-semiconductor transition (MST) behavior at low temperatures. Zn0.95Ga0.05O films, deposited by pulsed laser deposition in the pressure range of similar to 10(-2) Torr of oxygen, were found to be crystalline and exhibited degeneracy at room temperature with the electrical resistivity close to 1.4 x 10(-4) Omega cm and transmittance > 80% in the visible region. Temperature dependent resistivity measurements of these highly conducting and transparent films also showed, for the first time, a MST at similar to 170 K. Mechanisms responsible for these observations are discussed in the terms of dopant addition and its effect on ionization efficiency of oxygen vacancies.

引用

页码：1 / 3

页数：3

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