Misfit Strain Relaxation Mechanisms in Core/Shell Nanowires

被引:6
作者
Chu, Haijian [1 ,2 ]
Zhou, Caizhi [1 ]
Wang, Jian [1 ]
Beyerlein, Irene J. [1 ]
机构
[1] Los Alamos Natl Lab, Los Alamos, NM 87545 USA
[2] Yanzhou Univ, Res Grp Mech, Yangzhou 225009, Peoples R China
关键词
DISLOCATION LOOPS; QUANTUM DOTS; GROWTH; HETEROSTRUCTURES; ARRAYS; FILMS;
D O I
10.1007/s11837-012-0435-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In the past decade, core/shell nanowires (NWs) have attracted much attention due to the broad variety of potential applications of these structures in future nanoelectronic and nanophotonic devices. Because of the lattice mismatch between the core and shell materials, crystal dislocations often form to relax the mismatch strains. In this article, we propose a relaxation mechanism for the misfit strains generated in the core/shell NWs, in which lattice dislocations nucleate from the outer surfaces and then propagate to the core/shell interface. An analytical model is developed to predict the critical shell thickness corresponding to defect-free core/shell NWs with respect to the growth direction.
引用
收藏
页码:1258 / 1262
页数:5
相关论文
共 28 条
[1]   Structural, optical, electrical and luminescence properties of electron beam evaporated CdSe:In films [J].
Basheer, M. G. Syed Ahamed ;
Rajni, K. S. ;
Vidhya, V. S. ;
Swaminathan, V. ;
Thayumanavan, A. ;
Murali, K. R. ;
Jayachandran, M. .
CRYSTAL RESEARCH AND TECHNOLOGY, 2011, 46 (03) :261-266
[2]   ANALYSIS OF THE STRAINED-LAYER CRITICAL THICKNESS CONCEPT BASED ON A PEIERLS-NABARRO MODEL OF A THREADING DISLOCATION [J].
BELTZ, GE ;
FREUND, LB .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1994, 69 (01) :183-202
[3]   Vertical high-mobility wrap-gated InAs nanowire transistor [J].
Bryllert, T ;
Wernersson, LE ;
Fröberg, LE ;
Samuelson, L .
IEEE ELECTRON DEVICE LETTERS, 2006, 27 (05) :323-325
[4]   Self-energy of elliptical dislocation loops in anisotropic crystals and its application for defect-free core/shell nanowires [J].
Chu, H. J. ;
Wang, J. ;
Zhou, C. Z. ;
Beyerlein, I. J. .
ACTA MATERIALIA, 2011, 59 (18) :7114-7124
[5]   Three-dimensional elastic displacements induced by a dislocation of polygonal shape in anisotropic elastic crystals [J].
Chu, H. J. ;
Pan, E. ;
Wang, J. ;
Beyerlein, I. J. .
INTERNATIONAL JOURNAL OF SOLIDS AND STRUCTURES, 2011, 48 (7-8) :1164-1170
[6]  
Chu H. J., 2012, J MECH PHYS IN PRESS
[7]   Tailoring the Vapor-Liquid-Solid Growth toward the Self-Assembly of GaAs Nanowire Junctions [J].
Dai, Xing ;
Dayeh, Shadi A. ;
Veeramuthu, Vaithianathan ;
Larrue, Alexandre ;
Wang, Jian ;
Su, Haibin ;
Soci, Cesare .
NANO LETTERS, 2011, 11 (11) :4947-4952
[8]   Growth, Defect Formation, and Morphology Control of Germanium-Silicon Semiconductor Nanowire Heterostructures [J].
Dayeh, Shadi A. ;
Wang, Jian ;
Li, Nan ;
Huang, Jian Yu ;
Gin, Aaron V. ;
Picraux, S. Thomas .
NANO LETTERS, 2011, 11 (10) :4200-4206
[9]   THE DETERMINATION OF THE ELASTIC FIELD OF AN ELLIPSOIDAL INCLUSION, AND RELATED PROBLEMS [J].
ESHELBY, JD .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 241 (1226) :376-396
[10]   DISLOCATION MECHANISMS OF RELAXATION IN STRAINED EPITAXIAL-FILMS [J].
FREUND, LB .
MRS BULLETIN, 1992, 17 (07) :52-60