Band-gap change in ordered/disordered GaAs1-ySby layers grown on (001) and (111)B InP substrates

被引：13
作者：
Kawamura, Y
Gomyo, A
Suzuki, T
Higashino, T
Inoue, N
机构：
[1] Univ Osaka Prefecture, Adv Sci & Technol Res Inst, Osaka 5998570, Japan
[2] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan
[3] NEC Corp Ltd, Photon & Wireless Devices Res Labs, Tsukuba, Ibaraki 3058501, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2002年 / 41卷 / 4B期
关键词：
GaAsSb; MBE; CuPt type; ordered structure;
D O I：
10.1143/JJAP.41.L447
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaAs1-ySby ternary layers were grown on (001) and (111)B InP substrates by molecular beam epitaxy (MBE), and were characterized using optical absorption measurements and transmission electron diffraction (TED) measurements. A marked band-gap change was observed between the GaAsSb layers grown on (001) InP substrate and those grown on (111)B InP substrate. It was found that the band-gap change corresponds to the CuPt-type ordered/disordered structure in GaAsSb layers grown on (001) and (111)B InP substrates.
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收藏
页码：L447 / L449
页数：3
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