Band gap change and interfacial reaction in Hf-silicate film grown on Ge(001)

被引：12

作者：

Cho, Y. -J. ^{[1
]}

Lee, W. J. ^{[2
]}

Kim, C. Y. ^{[2
]}

Cho, M. -H. ^{[2
]}

Kim, H. ^{[3
]}

Lee, H. J. ^{[3
]}

Moon, D. W. ^{[4
]}

Kang, H. J. ^{[1
]}

机构：

[1] Chungbuk Natl Univ, Dept Phys, Cheongju 361763, South Korea

[2] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[3] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea

[4] Korea Res Inst Stand & Sci, Nano Bio Fus Res Ctr, Taejon 305606, South Korea

来源：

JOURNAL OF CHEMICAL PHYSICS | 2008年 / 129卷 / 16期

关键词：

D O I：

10.1063/1.3000392

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The interfacial reaction of hafnium-silicate [(HfO2)(x)(SiO2)(1-x), x=0.5, 0.7] thin films grown on Ge(001) by atomic layer deposition was investigated using x-ray photoelectron spectroscopy and medium energy ion scattering spectroscopy. According to the peak changes in Hf 4f and Ge 3d, the Hf-silicate film reacted with the oxidized Ge surface forming Hf-germanate at the interface. The formation of Hf-germanate induced band bending of the Ge substrate at the interface and decreased band gap to 5.1 eV, which was lower than that of GeO2 (5.6 eV). In particular, the interfacial reaction was dependent on the amount of SiO2 in the Hf-silicate film, which resulted in more decrement in the band gap in the film with a high SiO2 fraction. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3000392]

引用

页数：4

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