Comparison of inductively coupled plasma chemistries for dry etching of group III-nitrides

被引：0
作者：
Cho, H [1 ]
Kim, JK [1 ]
Pearton, SJ [1 ]
机构：
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
来源：
JOURNAL OF CERAMIC PROCESSING RESEARCH | 2001年 / 2卷 / 03期
关键词：
dry etching; inductively coupled plasma; III-nitirides; etch selectivity;
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A comparison of etch characteristics of GaN, InN and AlN has been performed in boron halides- (BCl3, BI3, and BBr3) and interhalogen- (ICI and IBr) based Inductively Coupled Plasma (ICP) discharges. An etch rate of 1.1 mum/minute, the highest value reported for InN and etch selectivities of similar to25 for InN over AlN and similar to7 for InN over GaN were obtained in BCl3 ICP discharges. Etch selectivities similar to100 for InN over GaN and AlN are obtained in BI3 due to the relatively high volatility of the InIx etch products and the lower bond strength of InN. Maximum selectivities of similar to10 for InN over GaN and similar to30 for InN over AlN were obtained with ICI and IBr chemistries. The etched surface morphologies of GaN in BI3, BBr3, ICI and EBr mixtures are similar or better than those of the control sample.
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页码：139 / 145
页数：7
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