Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location

被引：41

作者：

Edmunds, C. ^{[1
]}

Tang, L. ^{[1
,2
]}

Shao, J. ^{[1
,2
]}

Li, D. ^{[1
,2
]}

Cervantes, M. ^{[1
]}

Gardner, G. ^{[2
,3
]}

Zakharov, D. N. ^{[2
]}

Manfra, M. J. ^{[1
,2
,3
,4
]}

Malis, O. ^{[1
]}

机构：

[1] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA

[2] Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[3] Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA

[4] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 10期

基金：

美国国家科学基金会;

关键词：

GAN;

D O I：

10.1063/1.4751040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a systematic study of the near-infrared intersubband absorption in AlGaN/GaN superlattices grown by plasma-assisted molecular-beam epitaxy as a function of Si-doping profile with and without delta-doping. The transition energies are in agreement with theoretical calculations including many-body effects. A dramatic reduction of the intersubband absorption linewidth is observed when the delta-doping is placed at the end of the quantum well. This reduction is attributed to the improvement of interface roughness. The linewidth dependence on interface roughness is well reproduced by a model that considers the distribution of well widths measured with transmission electron microscopy. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751040]

引用

页数：4

共 16 条

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