Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location

被引：41
作者：
Edmunds, C. [1 ]
Tang, L. [1 ,2 ]
Shao, J. [1 ,2 ]
Li, D. [1 ,2 ]
Cervantes, M. [1 ]
Gardner, G. [2 ,3 ]
Zakharov, D. N. [2 ]
Manfra, M. J. [1 ,2 ,3 ,4 ]
Malis, O. [1 ]
机构：
[1] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA
[2] Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
[3] Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA
[4] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 10期
基金：
美国国家科学基金会;
关键词：
GAN;
D O I：
10.1063/1.4751040
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a systematic study of the near-infrared intersubband absorption in AlGaN/GaN superlattices grown by plasma-assisted molecular-beam epitaxy as a function of Si-doping profile with and without delta-doping. The transition energies are in agreement with theoretical calculations including many-body effects. A dramatic reduction of the intersubband absorption linewidth is observed when the delta-doping is placed at the end of the quantum well. This reduction is attributed to the improvement of interface roughness. The linewidth dependence on interface roughness is well reproduced by a model that considers the distribution of well widths measured with transmission electron microscopy. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751040]
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页数：4
相关论文
共 16 条
[1]   ABSORPTION OF INFRARED RADIATION BY ELECTRONS IN SEMICONDUCTOR INVERSION LAYERS [J].
ALLEN, SJ ;
TSUI, DC ;
VINTER, B .
SOLID STATE COMMUNICATIONS, 1976, 20 (04) :425-428
[2]  
Bandara K. M., 1989, APPL PHYS LETT, V55, P206
[3]   Electrically adjustable intersubband absorption of a GaN/AlN superlattice grown on a transistorlike structure [J].
Baumann, Esther ;
Giorgetta, Fabrizio R. ;
Hofstetter, Daniel ;
Leconte, Sylvain ;
Guillot, Fabien ;
Bellet-Amalric, Edith ;
Monroy, Eva .
APPLIED PHYSICS LETTERS, 2006, 89 (10)
[4]   nextnano: General purpose 3-D simulations [J].
Birner, Stefan ;
Zibold, Tobias ;
Andlauer, Till ;
Kubis, Tillmann ;
Sabathil, Matthias ;
Trellakis, Alex ;
Vogl, Peter .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (09) :2137-2142
[5]   EFFECTS OF HARTREE, EXCHANGE, AND CORRELATION-ENERGY ON INTERSUBBAND TRANSITIONS [J].
BLOSS, WL .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (08) :3639-3642
[6]   Near-Infrared Absorption in Lattice-Matched AlInN/GaN and Strained AlGaN/GaN Heterostructures Grown by MBE on Low-Defect GaN Substrates [J].
Edmunds, C. ;
Tang, L. ;
Li, D. ;
Cervantes, M. ;
Gardner, G. ;
Paskova, T. ;
Manfra, M. J. ;
Malis, O. .
JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (05) :881-886
[7]   Effect of Si doping on GaN/AlN multiple-quantum-well structures for intersubband optoelectronics at telecommunication wavelengths [J].
Guillot, F. ;
Amstatt, B. ;
Bellet-Amalric, E. ;
Monroy, E. ;
Nevou, L. ;
Doyennette, L. ;
Julien, F. H. ;
Dang, Le Si .
SUPERLATTICES AND MICROSTRUCTURES, 2006, 40 (4-6) :306-312
[8]   Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates [J].
Kandaswamy, P. K. ;
Machhadani, H. ;
Kotsar, Y. ;
Sakr, S. ;
Das, A. ;
Tchernycheva, M. ;
Rapenne, L. ;
Sarigiannidou, E. ;
Julien, F. H. ;
Monroy, E. .
APPLIED PHYSICS LETTERS, 2010, 96 (14)
[9]   GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance [J].
Kandaswamy, P. K. ;
Guillot, F. ;
Bellet-Amalric, E. ;
Monroy, E. ;
Nevou, L. ;
Tchernycheva, M. ;
Michon, A. ;
Julien, F. H. ;
Baumann, E. ;
Giorgetta, F. R. ;
Hofstetter, D. ;
Remmele, T. ;
Albrecht, M. ;
Birner, S. ;
Dang, Le Si .
JOURNAL OF APPLIED PHYSICS, 2008, 104 (09)
[10]   Repeatable low-temperature negative-differential resistance from Al0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free-standing GaN substrates [J].
Li, D. ;
Tang, L. ;
Edmunds, C. ;
Shao, J. ;
Gardner, G. ;
Manfra, M. J. ;
Malis, O. .
APPLIED PHYSICS LETTERS, 2012, 100 (25)
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