Non-vacuum synthesis of CZTS by sulphurization of electrochemically layered zinc and tin on copper

被引：3

作者：

Indubala, E. ^{[1
,2
]}

Sneha, N. ^{[3
]}

Sudha, V ^{[2
]}

Harinipriya, S. ^{[1
]}

机构：

[1] SRM Inst Sci & Technol, SRM Res Inst, Electrochem Syst Lab, Kattankulathur 603203, India

[2] SRM Inst Sci & Technol, Dept Chem, Kattankulathur 603203, India

[3] SRM Inst Sci & Technol, Dept Chem Engn, Kattankulathur 603203, India

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2019年 / 101卷

关键词：

Electrochemical; Non-vacuum; Elemental sulphur; CZTS; CuZnSn alloy; Raman spectra; FILM SOLAR-CELLS; CU2ZNSNS4; THIN-FILMS; HYDROGEN EVOLUTION REACTION; WORK FUNCTION; DEPOSITION; ELECTRODEPOSITION; PRECURSORS;

D O I：

10.1016/j.mssp.2019.05.027

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sequential layering of Zn and Sn on Cu foil by electrolysis of appropriate salt solution is carried out. The layered metals are annealed at 350 degrees C to form Cu-Zn-Sn alloy. To the alloy, 30 g of (excess) elemental sulphur powder is added and sulphurized at 350 degrees, 450 degrees, 550 degrees and 650 degrees C. Structural, morphological, optical and electrochemical investigations revealed CZTS as favourable phase at all sulphurization temperatures. Electrochemical Impedance studies in conjunction with Raman spectroscopy indicated negligible secondary phases for CZTS-550 degrees C when compared to CZTS synthesized at other temperatures. For CZTS-550 degrees C, UV-vis DRS studies depicted 1.51 eV as band gap and high absorption coefficient of 10(5) cm(-1). Thus CZTS synthesized by the demonstrated procedure can be suitable for optoelectronic applications.

引用

页码：37 / 45

页数：9

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