Considering Different Temperatues and Volume Concentrations of Slurry to Esitablish Simulation and Regression Analysis Model of Abrasive Removal Depth of Silicon Wafer for Chemical Mechanical Polishing

The paper firstly soaks silicon wafer in slurry at different temperatures and different volume concentrations for 30 minutes, and then performs atomic force microscopic (AFM) experiment to calculate the specific down force energy SDFEreaction values of silicon wafer soaked in slurry at different temperatures and different volume concentrations. These SDFEreaction values are substituted into an innovatively established theoretical simulation model of abrasive removal depth of silicon wafer under chemical mechanical polishing (CMP) by a pattern-free polishing pad soaked in slurry at different temperatures and different volume concentrations. First of all, the paper conducts CMP of silicon wafer by a pattern-free polishing pad with slurry at different volume concentrations at room temperature, and then compares the experimental results with the simulation results. After that, the paper makes a comparison between the simulation result and experimental result of abrasive removal depth per minute and fords the average difference ratio. After applying the modification concept of average difference ratio, the simulated abrasive removal depth per minute being close to the experimental value after compensation and modification can serve as a parameter value being similar to experimental value for regression analysis. Finally, the paper establishes a compensatory regression equations with consideration of different temperatures and different volume concentrations.