Electron-nuclear spin dynamics of Ga centers in GaAsN dilute nitride semiconductors probed by pump-probe spectroscopy

被引：5

作者：

Sandoval-Santana, J. C. ^{[1
]}

Ibarra-Sierra, V. G. ^{[1
]}

Azaizia, S. ^{[2
]}

Carrere, H. ^{[2
]}

Bakaleinikov, L. A. ^{[3
]}

Kalevich, V. K. ^{[3
]}

Ivchenko, E. L. ^{[3
]}

Marie, X. ^{[2
]}

Amand, T. ^{[2
]}

Balocchi, A. ^{[2
]}

Kunold, A. ^{[4
]}

机构：

[1] Univ Autonoma Metropolitana Iztapalapa, Dept Fis, Av San Rafael Atlixco 186, Cuidad De Mexico 09340, Mexico

[2] Univ Toulouse, INSA CNRS UPS, LPCNO, 135 Ave Rangueil, F-31077 Toulouse, France

[3] Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[4] Univ Autonoma Metropolitana Azcapotzalco, Area Fis Teor & Mat Condensada, Av San Pablo 180, Cuidad De Mexico 02200, Mexico

来源：

EUROPEAN PHYSICAL JOURNAL PLUS | 2018年 / 133卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

ROOM-TEMPERATURE; DEPENDENT RECOMBINATION; DIAMOND; DECOHERENCE; ORIENTATION; RELAXATION; RESONANCE; GERMANIUM; SILICON;

D O I：

10.1140/epjp/i2018-11957-4

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We propose an experimental procedure to track the evolution of electronic and nuclear spins in Ga2+ centers in GaAsN dilute semiconductors. The method is based on a pump-probe scheme that enables to monitor the time evolution of the three components of the electronic and nuclear spin variables. In contrast to other characterization methods, as nuclear magnetic resonance, this one only needs moderate magnetic fields (B approximate to 10 mT), and does not require microwave irradiation. Specifically, we carry out a series of tests for different experimental conditions in order to optimize the procedure for maximum sensitivity in the measurement of the circular degree of polarization. Based on previous experimental results and the theoretical calculations presented here, we estimate that the method could yield a time resolution of about 10 ps.

引用

页数：10

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