Implementation of a closed-loop growth scheme for AlAs-GaAs distributed Bragg reflector (DBR) structures using in situ pyrometric interferometry monitoring

被引：4

作者：

Liu, X

Ranalli, E

Sato, DL

Lee, HP

机构：

[1] Dept. of Elec. and Comp. Engineering, University of California, Irvine, Irvine

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 03期

关键词：

D O I：

10.1109/68.481110

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated a closed-loop control system for molecular beam epitaxial growth of quarter-wavelength AlAs-GaAs distributed Bragg reflector (DBR) structures using in situ pyrometric interferometry, The quasi-sinusoidal PI data was being treated as an amplitude and phase modulated signal for control of layer thickness, Highly reproducible PI signals were obtained without the need of careful growth rate calibration. This technique can be useful in achieving reproducible growth of DBR structures, including vertical cavity surface emitting lasers.

引用

页码：340 / 342

页数：3

共 3 条

[1] Methodologies for in situ pyrometric interferometry monitoring and control of molecular beam epitaxy growth of AlAs/GaAs distributed Bragg reflectors
Lee, HP
Li, Y
Sato, DL
Zhou, JJ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03): : 2151 - 2156
[2] Methodologies for in situ pyrometric interferometry monitoring and control of molecular beam epitaxy growth of AlAs/GaAs distributed Bragg reflectors
J Vac Sci Technol B, 3 (2151):
[3] In situ pyrometric interferometry monitoring and control of III-V layered structures during MBE growth: Modeling and implementation
Sato, DL
Liu, X
Li, Y
Stubberud, AR
Lee, HP
Kuo, JM
SEMICONDUCTOR CHARACTERIZATION: PRESENT STATUS AND FUTURE NEEDS, 1996, : 527 - 531

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