Device simulation and fabrication of field effect solar cells

被引：6

作者：

Miyazaki, K

Matsuki, N

Shinno, H

Fujioka, H

Oshima, M

Koinuma, H

机构：

[1] Tokyo Inst Technol, Ceram Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan

来源：

BULLETIN OF MATERIALS SCIENCE | 1999年 / 22卷 / 03期

关键词：

two-dimensional device simulation; field effect; alpha-Si : H; solar cell;

D O I：

10.1007/BF02749993

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The performance of a novel hydrogenated amorphous silicon (a-Si:H) solar cell which utilizes the field effect solar cell (FESC) has been investigated both theoretically and experimentally. The theoretical analysis has been done for both p- and n-channel FESCs by employing a two-dimensional device simulator which is based on current continuity and Poisson equations. The calculated performance is compared with that of conventional (p-i-n) a-Si:H solar cells. The calculation demonstrated that both n-channel and p-channel FESCs could improve the conversion efficiency by as much as 50%. In order to check the reliability of simulation, the transport properties of intrinsic a-Si:H film and thin film transistor (TFT) have also been calculated and compared with the experimentally obtained characteristics. Experimental verification of TFT and FESC has been attempted by using MgO and a-SiN:H as dielectric layer materials. Preliminary results are presented.

引用

页码：729 / 733

页数：5

共 8 条

[1] Characteristics of field effect a-Si:H solar cells [J].

Fujioka, H ;

Oshima, M ;

Hu, C ;

Sumiya, M ;

Matsuki, N ;

Miyazaki, K ;

Koinuma, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 :1287-1290

[2] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 87 (02) :387-387

[3] PLASMA SI NITRIDE - A PROMISING DIELECTRIC TO ACHIEVE HIGH-QUALITY SILICON MIS-IL SOLAR-CELLS [J].

HEZEL, R ;

SCHORNER, R .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :3076-3079

[4] Structure and numerical simulation of field effect solar cell [J].

Koinuma, H ;

Fujioka, H ;

Hu, C ;

Koida, T ;

Kawasaki, M .

THIN FILMS FOR PHOTOVOLTAIC AND RELATED DEVICE APPLICATIONS, 1996, 426 :95-100

[5]

KUWANO Y, 1981, JPN J APPL PHYS S, V20, P20

[6]

PILLER H, 1985, HDB OPTICAL CONSTANT

[7]

SHAW T, 1988, J APPL PHYS, V6419, P457

[8]

TSUKADA T, 1991, 49 ANN DEV RES C COL, p2A3

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