Formation of nickel nanodots on GaN

被引：8

作者：

Aurongzeb, D ^{[1
]}

Ram, KB

Holtz, M

Basavaraj, M

Kipshidze, G

Yavich, B

Nikishin, SA

Temkin, H

机构：

[1] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA

[2] Texas Tech Univ, Dept Elect Engn, Lubbock, TX 79409 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2159077

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We examine the annealing-induced formation of nickel nanodots on GaN substrates. The initial Ni layer thickness is 2 nm. Annealing temperatures range from 550 to 930 degrees C. The islands are well defined at the highest temperatures. Island formation kinetics provide an activation energy of 0.34 +/- 0.07 eV. Time dependence of the nanodot island areas, annealed at 750 degrees C, is consistent with a t(2/3). These observations are indicative of diffusion-limited ripening as the primary formation mechanism. X-ray diffraction results show that nickel gallides form at anneal temperatures 750 degrees C and above.

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页数：4

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