Fast and low power Michelson interferometer thermo-optical switch on SOI

被引：173

作者：

Song, Junfeng ^{[1
,2
]}

Fang, Q. ^{[1
]}

Tao, S. H. ^{[1
]}

Liow, T. Y. ^{[1
]}

Yu, M. B. ^{[1
]}

Lo, G. Q. ^{[1
]}

Kwong, D. L. ^{[1
]}

机构：

[1] Agcy Sci Technol & Res, Inst Microelect, Singapore 117685, Singapore

[2] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China

来源：

OPTICS EXPRESS | 2008年 / 16卷 / 20期

关键词：

D O I：

10.1364/OE.16.015304

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We designed and fabricated silicon-on-insulator based Michelson interferometer (MI) thermo-optical switches with deep etched trenches for heat-isolation. Switch power was reduced similar to 20% for the switch with deep etched trenches, and the MI saved similar to 50% power than that of the Mach-Zehnder interferometer. 10.6 mW switch power, similar to 42 mu s switch time for the MI with deep trenches, 13.14 mW switch power and similar to 34 mu s switch time for the MI without deep trenches were achieved. (C) 2008 Optical Society of America

引用

页码：15304 / 15311

页数：8

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