AC-Impedance Spectroscopic Analysis on the Charge Transport in CVD-Grown Graphene Devices with Chemically Modified Substrates

被引：3

作者：

Min, Bok Ki ^{[1
,2
]}

Kim, Seong K. ^{[1
]}

Kim, Seong Ho ^{[1
]}

Kang, Min-A ^{[1
]}

Noothongkaew, Suttinart ^{[1
]}

Mills, Edmund M. ^{[3
]}

Song, Wooseok ^{[1
]}

Myung, Sung ^{[1
]}

Lim, Jongsun ^{[1
]}

Kim, Sangtae ^{[3
]}

An, Ki-Seok ^{[1
]}

机构：

[1] Korea Res Inst Chem Technol, Film Mat Res Ctr, Yuseong 305600, Daejeon, South Korea

[2] Sungkyunkwan Univ, Dept Phys, 2066 Seobu Ro, Suwon 440746, Gyeonggi Do, South Korea

[3] Univ Calif Davis, Dept Chem Engn & Mat Sci, Davis, CA 95616 USA

来源：

ACS APPLIED MATERIALS & INTERFACES | 2016年 / 8卷 / 41期

基金：

新加坡国家研究基金会;

关键词：

CVD-grown graphene; ac-impedance spectroscopy; self-assembled monolayers (SAMs); charge transport; ac conduction; SELF-ASSEMBLED MONOLAYERS; VAPOR-DEPOSITION; TRANSISTORS; INTERFACE; MOBILITY; FILMS;

D O I：

10.1021/acsami.6b03705

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A comprehensive study for the effect of interfacial buffer layers on the electrical transport behavior in CVD-grown graphene based devices has been performed by ac-impedance spectroscopy (IS) analysis. We examine the effects of the trap charges at graphene/SiO2 interface on the total capacitance by introducing self-assembled monolayers (SAMs). Furthermore, the charge transports in the polycrystalline graphene are characterized through the temperature-dependent IS measurement, which can be explained by the potential barrier model. The frequency-dependent conduction reveals that the conductivity of graphene is related with the mobility, which is limited by the scattering caused by charged adsorbates on SiO2 surface.

引用

页码：27421 / 27425

页数：5

共 2 条

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