Evaluation of High Power Experimental SiC SGTO Devices for Pulsed Power Applications

被引：2
|
作者：
Lacouture, Shelby [1 ]
Lawson, Kevin [1 ]
Bayne, Stephen [1 ]
Giesselmann, Michael [1 ]
O'Brien, Heather [2 ]
Scozzie, Charles J. [2 ]
机构：
[1] Texas Tech Univ, Dept Elect & Comp Engn, Ctr Pulsed Power & Power Elect, Lubbock, TX 79409 USA
[2] US Army Res Lab, Adelphi, MD 20783 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷
关键词：
Silicon Carbide; Thyristors; Three Phase Controlled Rectifier;
D O I：
10.4028/www.scientific.net/MSF.717-720.1183
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The development of new semiconductor designs requires that extensive testing be completed in order to fully understand the device's characteristics and performance capabilities. This paper describes the evaluation of experimental Silicon Carbide high power Super Gate Turn Off Thyristors (SiC SGTOs) in a unique test bed that is capable of stressing the devices with very high energy/power levels while at the same time mimicking a realistic, real world application for such devices.
引用
收藏
页码：1183 / +
页数：2
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