Proposal of Single Metal/Dual High-k Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control

被引：4

作者：

Mise, Nobuyuki ^{[1
]}

Morooka, Tetsu ^{[1
]}

Eimori, Takahisa ^{[1
]}

Ono, Tetsuo ^{[1
]}

Sato, Motoyuki ^{[1
]}

Kamiyama, Satoshi ^{[1
]}

Nara, Yasuo ^{[1
]}

Ohji, Yuzuru ^{[1
]}

机构：

[1] Semicond Leading Edge Technol Inc, Tsukuba, Ibaraki 3058569, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 01期

关键词：

Al2O3; high-k gate dielectric; metal gate; MgO; threshold voltage; OXIDES; STACK;

D O I：

10.1109/TED.2008.2007830

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have proposed a single metal/dual high-k gate stack for aggressively scaled complementary metal-insulator-semiconductor field-effect transistors (MISFETs). The threshold voltage is controlled by the dual high-k dielectrics, such as MgO- and Al2O3-containing HfSiON for n- and p-type MISFETs, respectively. The gate profile is precisely controlled by taking advantage of a common gate electrode, which will suppress the variation in device performance. Based on this device concept, we have actually fabricated WMN/HfMgSiON n-type MISFETs and W/TiN/HfAlSiO p-type MISFETs and have successfully demonstrated a low threshold voltage operation for both of n- and p-type MISFETs.

引用

页码：85 / 92

页数：8

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