Incommensurate superstructure in heavily doped fullerene layer on Bi/Si(111) surface

被引：1
|
作者：
Gruznev, D. V. [1 ,2 ]
Bondarenko, L. V. [1 ,2 ]
Tupchaya, A. Y. [1 ]
Matetskiy, A. V. [1 ,2 ]
Zotov, A. V. [1 ,2 ,3 ]
Saranin, A. A. [1 ,2 ]
机构：
[1] Inst Automat & Control Proc, Vladivostok 690041, Russia
[2] Far Eastern Fed Univ, Vladivostok 690950, Russia
[3] Vladivostok State Univ Econ & Serv, Vladivostok 690600, Russia
来源：
JOURNAL OF CHEMICAL PHYSICS | 2015年 / 143卷 / 07期
基金：
俄罗斯科学基金会;
关键词：
ELECTRONIC-PROPERTIES; C-60; MOLECULES; BANDS;
D O I：
10.1063/1.4928866
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Cs adsorption onto the C-60-covered Si(111)-beta-root 3 x root 3-Bi reconstruction has been studied by means of scanning tunneling microscopy and photoelectron spectroscopy. Unexpected increase in apparent size of every second C-60 molecule has been detected, hereupon the close packed molecular array almost doubles its periodicity. The change affects only the fullerenes that are in direct contact with the metal-induced reconstruction and takes no place already in the second layer. Photoelectron studies have revealed that this incommensurate "2 x 2" superstructure of a heavily doped C-60 monolayer remains in an insulating state regardless of doping level. (C) 2015 AIP Publishing LLC.
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页数：4
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