Incommensurate superstructure in heavily doped fullerene layer on Bi/Si(111) surface

被引：1

作者：

Gruznev, D. V. ^{[1
,2
]}

Bondarenko, L. V. ^{[1
,2
]}

Tupchaya, A. Y. ^{[1
]}

Matetskiy, A. V. ^{[1
,2
]}

Zotov, A. V. ^{[1
,2
,3
]}

Saranin, A. A. ^{[1
,2
]}

机构：

[1] Inst Automat & Control Proc, Vladivostok 690041, Russia

[2] Far Eastern Fed Univ, Vladivostok 690950, Russia

[3] Vladivostok State Univ Econ & Serv, Vladivostok 690600, Russia

来源：

JOURNAL OF CHEMICAL PHYSICS | 2015年 / 143卷 / 07期

基金：

俄罗斯科学基金会;

关键词：

ELECTRONIC-PROPERTIES; C-60; MOLECULES; BANDS;

D O I：

10.1063/1.4928866

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Cs adsorption onto the C-60-covered Si(111)-beta-root 3 x root 3-Bi reconstruction has been studied by means of scanning tunneling microscopy and photoelectron spectroscopy. Unexpected increase in apparent size of every second C-60 molecule has been detected, hereupon the close packed molecular array almost doubles its periodicity. The change affects only the fullerenes that are in direct contact with the metal-induced reconstruction and takes no place already in the second layer. Photoelectron studies have revealed that this incommensurate "2 x 2" superstructure of a heavily doped C-60 monolayer remains in an insulating state regardless of doping level. (C) 2015 AIP Publishing LLC.

引用

页数：4

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