Study of band nonparabolicity using electron-cyclotron resonance of InGaAs/InAlAs quantum wells below 100 T

被引：2

作者：

Shibata, K

Kotera, N

Arimoto, H

Miura, N

Wang, YJ

Jones, ED

Reno, JL

Washima, M

Mishima, T

机构：

[1] Kyushu Inst Technol, Dept Comp Sci & Elect, Iizuka, Fukuoka 8208502, Japan

[2] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba, Japan

[3] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32306 USA

[4] Sandia Natl Labs, Albuquerque, NM 87185 USA

[5] Hitachi Cable Ltd, Tsuchiura, Ibaraki, Japan

[6] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 185, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 12卷 / 1-4期

关键词：

nonparabolicity; cyclotron resonance; quantum wells;

D O I：

10.1016/S1386-9477(01)00473-8

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Nonparabolic tendency of conduction subbands in InGaAs/InAlAs quantum wells (QWS), lattice-matched to InP, were studied using cyclotron resonance (CR) because its confinement potential was stronger than in InGaAs/InP and GaAs/GaAlAs QWs. Thickness of InGaAs well was 5-10 nm. Barrier thickness was more than 10 nm. Field-scanned pulse CR and wavelength-scanned CR were observed. CR energy changed sublinearly with magnetic field. This curve agreed with our calculation, based on Kane's three-level band theory and Landau quantization. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：566 / 569

页数：4

共 11 条

[1] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION [J].

BASTARD, G .

PHYSICAL REVIEW B, 1981, 24 (10) :5693-5697

[2]

Bastard G., 1988, Wave Mechanics Applied to Semiconductor Heterostructures, P49

[3] Conduction band mass determinations for N-type InGaAs/InAlAs single quantum wells [J].

Jones, ED ;

Kotera, N ;

Reno, JL ;

Wang, JJ .

OPTOELECTRONIC MATERIALS AND DEVICES, 1998, 3419 :146-150

[4] Characterization of heavy masses of two-dimensional conduction subband in InGaAs/InAlAs MQW structures by pulsed cyclotron resonance technology [J].

Kotera, N ;

Arimoto, H ;

Miura, N ;

Jones, ED ;

Tanaka, K ;

Mishima, T ;

Washima, M .

OPTOELECTRONIC MATERIALS AND DEVICES, 1998, 3419 :151-158

[5]

Kotera N., 1998, Proceedings of the Eighth International Conference on Narrow Gap Semiconductors, P328

[6] Electron effective mass and nonparabolicity in InGaAs/InAlAs quantum wells lattice-matched to InP [J].

Kotera, N ;

Arimoto, H ;

Miura, N ;

Shibata, K ;

Ueki, Y ;

Tanaka, K ;

Nakamura, H ;

Mishima, T ;

Aiki, K ;

Washima, M .

PHYSICA E, 2001, 11 (2-3) :219-223

[7] Observation of nonparabolic conduction subbands in InGaAs/InAlAs multi-quantum wells by very-high-field pulse cyclotron resonance [J].

Kotera, N ;

Arimoto, H ;

Miura, N ;

Washima, M ;

Mishima, T .

PHYSICA E, 2001, 9 (02) :231-235

[8]

SHIBATA K, 2001, 10 INT C NARR GAP SE, P86

[9]

TANAKA K, 1999, P INT C IND PHOSPH R, P511

[10] NONPARABOLIC SUBBAND STRUCTURE OF GA0.47IN0.53AS-INP QUANTUM WELLS [J].

YAMADA, S ;

TAGUCHI, A ;

SUGIMURA, A .

APPLIED PHYSICS LETTERS, 1985, 46 (07) :675-677

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